About this Abstract |
Meeting |
2021 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnections 2021
|
Presentation Title |
The Formation and Growth Kinetics of a Peculiar Cu6Sn5/Ag3Sn Composite Intermetallic Layer at the Cu50Ag/Sn Interface during Solid-state Aging |
Author(s) |
Chien-Lung Liang, Tsung-Chieh Chiu, Kwang-Lung Lin |
On-Site Speaker (Planned) |
Chien-Lung Liang |
Abstract Scope |
In this study, Cu-50wt%Ag alloy was designed as an electrical fuse, metallization, or substrate material for soldering for the potential interfacial microstructure modification. The interfacial reaction between pure Sn and Cu50Ag substrate formed isolated Cu6Sn5 scallops and Ag3Sn particles. The solid-state aging, which was performed at 130oC (0.35 Tm), 155oC (0.37 Tm), and 188oC (0.40 Tm) for 0.5-4 h, induced the formation and growth of a peculiar planar Cu6Sn5/Ag3Sn composite intermetallic layer. The interfacial composite intermetallic layer was composed of the Ag3Sn phase embedded uniformly within the Cu6Sn5 matrix. The growth kinetics of the interfacial intermetallic layer as well as the consumption of the pure Sn and Cu50Ag substrate follows a diffusion-controlled mechanism. The divergent growth kinetics of the Cu6Sn5/Ag3Sn composite intermetallic layer observed at the designed aging temperatures was proposed to result from a possible diffusion mechanism transition from the surface diffusion into the grain boundary diffusion. |
Proceedings Inclusion? |
Planned: |
Keywords |
Electronic Materials, Phase Transformations, Thin Films and Interfaces |