About this Abstract |
Meeting |
2021 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnections 2021
|
Presentation Title |
High Electromigration Resistance of Nanotwinned Cu Redistribution Lines for Fan-out Packaging |
Author(s) |
I-Hsin Tseng, Chih Chen, Benson Lin, Chia-Cheng Chang |
On-Site Speaker (Planned) |
I-Hsin Tseng |
Abstract Scope |
In Fan-out package, the line width of redistribution layers (RDLs) decreases continuously. Therefore, the RDLs are under larger current density than before. In previous research, there are several methods to enhance electromigration lifetime, such as doping a few percent of metal atoms in Cu, adding a thin layer of metal layer at the top of RDLs to inhibit Cu surface diffusion and change the microstructure of Cu to increase the mechanical strength of RDLs. In this study, we adopt highly <111> oriented nanotwinned Cu (nt-Cu) to enhance the electromigration resistance in RDLs.
We compared the electromigration lifetime ofnt-Cu and regular Cu with polyimide capping. The microstructure changes of both two samples were observed by focused ion beam. The results show that the electromigration lifetime of nt-Cu lines is 4 times higher than regular Cu lines. Failure mechanisms will be presented in the conference. |
Proceedings Inclusion? |
Planned: |