About this Abstract |
Meeting |
2021 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnections 2021
|
Presentation Title |
Electromigration of Cu-Cu Bonds Fabricated by Instant Bonding Using <111>-oriented Nanotwinned Cu Microbumps |
Author(s) |
Kai-Cheng Shie, Po-Ning Hsu, Yu-Jin Li, King-Ning Tu, Chih Chen |
On-Site Speaker (Planned) |
Kai-Cheng Shie |
Abstract Scope |
Failure modes of electromigration (EM) tests in Cu-Cu bonds with 30 μm in diameter were investigated. The chips were fabricated by instant bonding which bonding time was shorter than 30 s. The bonding temperature was 300 ℃, and the bonding pressure was from 31 MPa to 90 MPa. The temperature and current density of the EM test were 150 ℃ and 2.12×10^5 A⁄cm^2, respectively. EM Lifetime (20 % resistance change) was longer than 1500 h for the bonding condition: 300 ℃/90 MPa/30 s, while the lifetime of Cu/Sn/Cu solder joints with the same diameter was 448 h. Due to the structure of bumps, current crowding happened at the passivation opening and voids formed there. Computed tomography images of 3D X-ray indicated that voids formed at the high current density (>10^6 A⁄cm^2) region, which implied that current crowding enhanced EM damages. |
Proceedings Inclusion? |
Planned: |