About this Abstract |
Meeting |
2021 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnections 2021
|
Presentation Title |
Modeling Effect of Copper Solute on Electromigration Induced Stress Generation in Al-based Interconnects |
Author(s) |
Kieran Cavanagh, Ping-Chuan Wang |
On-Site Speaker (Planned) |
Kieran Cavanagh |
Abstract Scope |
Electromigration as a degradation mechanism in microelectronics has been extensively studied for decades due to its reliability implications and the underlying materials science. It is well known that the addition of copper solute significantly improves the electromigration lifetime of Al interconnects. It has been observed that preferential Cu electromigration occurs near the cathode initially, followed by Al electromigration restricted within the Cu depleted region, inducing a localized mechanical stress gradient. The interaction between Cu and Al diffusion, as well as the evolution of the stress distribution, have been of great scientific interest. In this study, a numerical model is established to simulate such interaction in an Al (0.25 at% Cu) interconnect during electromigration. The model parameters and assumptions will be calibrated with experimental data from synchrotron-based x-ray microbeam techniques. Critical timescales involved in Al(Cu) electromigration failure will also be discussed. |
Proceedings Inclusion? |
Planned: |