|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Electronic Packaging and Interconnections
||Electromigration Behaviors of Nanotwinned Ag Interconnects
||Chi-Shen Chen, Tsung Lin, Fan-Yi Ouyang
|On-Site Speaker (Planned)
Advanced packaging techniques would be key bottleneck to enable heterogeneous integration in WBG semiconductors applications and metal direct bonding is regarded as a promising solution for 3D IC in advanced packaging technology. Ag interconnects will play an important role in advanced packaging because they possess unsurpassed thermal and electrical conductivity. In this study, we successfully fabricated nanotwinned (nt) Ag structure with a twin spacing around 9 nm. Compared to the regular Ag, the nt-Ag exhibits highly (111) preferred orientation, and its hardness can reach 1.88 GPa, being twice higher than the regular Ag ones. The electromigration (EM) behaviors were tested at 2 × 10^5 A/cm^2 at 150 °C. We found the nt-Ag possessed higher EM resistance than the regular Ag. The detailed microstructural evolution of nt-Ag during electromigration and its corresponding failure mechanism will be discussed and compared to regular ones in this talk.
||Thin Films and Interfaces, Nanotechnology,