About this Abstract |
Meeting |
2022 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnections
|
Presentation Title |
Cu-Cu Bonding with Silver Thin Film Capping Layer |
Author(s) |
Hsiang Hou Tseng, Chih Chen |
On-Site Speaker (Planned) |
Hsiang Hou Tseng |
Abstract Scope |
Cu-Cu bonding has replaced solder joints for ultrahigh density packaging due to its scaling ability and low resistance. However, copper can be oxidized easily and it can lead to poor quality. A thin passivation capping layer is a method to resolve this problem.
We adopt Ag passivation to protect Cu from oxidation, because Ag oxides can be reduced to Ag over 180 C and Ag has the lowest resistivity. 100 nm Ti and 200 nm Cu were deposited by sputtering on Si (100) substrate as adhesion layer and seed layer, respectively. A highly (111) nanotwinned copper (nt-Cu) film was deposited on the substrate by electroplating and chemical mechanical planarization (CMP) was conducted. After that, a 20 nm silver film was sputtered on the nt-Cu film. Two specimens were bonded together under 1MPa and bonded at 200 ℃for 60 minutes successfully, and the results will be presented in the conference. |
Proceedings Inclusion? |
Planned: |
Keywords |
Copper / Nickel / Cobalt, Thin Films and Interfaces, Other |