|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Electronic Packaging and Interconnections
||Effect of grain size and stress relaxation on whisker growth under applied pressure
||Nupur Jain, Piyush Jagtap, Allan Bower, Eric Chason
|On-Site Speaker (Planned)
Sn whiskers are a well-known problem affecting the reliability of electronic components. Stress is generally believed to provide the driving force behind whisker formation, yet their growth mechanism is still not fully understood. Through experiments, we have observed real-time whisker growth in Sn films under an applied pressure. In this work we extend previous studies to different film thicknesses and grain sizes to quantify whisker density and growth kinetics in systems with different strain relaxation rates. Using a finite element model, we analyze the evolution of stress in Sn films of different thicknesses and grain sizes. We report on the predicted whisker growth kinetics from the model and compare with the experiments.
||Electronic Materials, Thin Films and Interfaces, Modeling and Simulation