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Meeting 2022 TMS Annual Meeting & Exhibition
Symposium Electronic Packaging and Interconnections
Presentation Title Interfacial Reaction between Cu and In-48Sn Alloy
Author(s) Fu-Ling Chang, Han-Tang Hung, C. Robert Kao
On-Site Speaker (Planned) Fu-Ling Chang
Abstract Scope Nowadays, many applications require low soldering temperature process to avoid chip warpage during soldering. Two low melting temperature alloys, In-48Sn and Sn-58Bi, are receiving the most attentions. Sn-58Bi, with superior fatigue resistance and tensile strength, has been widely used in the industry. However, the brittle property of Bi-containing phases restricts the application of this materials. In-48Sn, with excellent mechanical properties and thermal conductivity, has not been fully investigated yet. Therefore, this study focused on the interfacial reactions between Cu and liquid/solid In-48Sn solder, especially the appearance of the Cu2In3Sn phase at low temperature. In order to obtain an artifact-free microstructure that is not damaged by mechanical polishing, cryogenic broad Ar beam ion polishing was applied. Electron probe micro-analyzer and X-Ray diffractometer were also used to identify the composition and phase structure at the interface.
Proceedings Inclusion? Planned:
Keywords Electronic Materials,

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

Characterisation of η-(Cu,Ni)6Sn5 Formed between Cu-xNi/Sn Couples
Characterising the Intermetallic Layer in Mixed Sn-Bi Paste/SAC BGA Solder Ball Joints
Comparing Intermetallic Compound Formation in Solder Interconnects under Different Current Load Conditions
Corrosion Mechanism of Co-based Surface Finishing Layer
Cu-Cu Bonding with Silver Thin Film Capping Layer
Development of Silver─Tin Alloy Paste for High Power IC Packaging by High Energy Ball Milling
Die-bonding Performance and Mechanism of Ag Micron Paste with Pressure-less Sintering
Effect of Geopolymer Ceramic Reinforcement to the Microstructure Formation and Mechanical Properties of Sn-0.7Cu Solder Joint
Effect of Grain Size and Stress Relaxation on Whisker Growth under Applied Pressure
Electromigration Behaviors of Nanotwinned Ag Interconnects
Electromigration of Cu-Cu Joints Fabricated by of Highly (111)-oriented Nanotwinned Cu
Enhancing Mechanical Properties via Adding Ni and Zn in Cu/Sn3.5Ag/Cu TLP Soldering by TCB Process
In-situ Observation of Liquid Solder Alloys and Solid Substrate Reactions Using High-voltage Transmission Electron Microscopy
In-situ Observations of Sn-58Bi/SAC305 Joints by Synchrotron Imaging
Interfacial Reaction between Cu and In-48Sn Alloy
Length Scale Dependent Mechanical Behaviour of Elastically Constrained Sn Rich Solder Joints
Low-thermal-budget Hybrid Cu-Cu Bonding with Highly <111>-oriented Nanotwinned Cu and Polyimide
Low Temperature and Presureless Cu-to-Cu Direct Bonding by Sintering of Green Synthesized Cu Nanoparticles
Low Temperature Direct Bonding in Atmosphere on Highly (111) Oriented Nanotwinned Silver
Low Temperature Solder Interconnect Board Level Shock Performance at Elevated Temperature
Microstructural Evolution of Bi Phase during Reflow and Thermal Aging in Sn-58Bi Solder
NOW ON-DEMAND ONLY - Stress Development in Solder Interconnects under Pulsed Electric Current
NOW ON-DEMAND ONLY – Study of Creep Properties of Sn-Ag-Cu Alloys Employing Different Strain Rates Using Nanoindentation
NOW ON-DEMAND ONLY - Tin Whisker Growth in Space
Power Cycling and Thermal Cycling Performance of Pressureless Silver Sintered Silicon Carbide Power Module Compared to Lead-free Solder Joint
Surface Precipitation and Growth of Bismuth Particles in Sn-Ag-Cu-Bi Solder Joints
Synchrotron X-ray Study of Cu Electromigration in A Blech Structure
The Role of Lengthscale in the Creep of Sn-3Ag-0.5Cu Solder with Controlled Microstructure
Thermal Cycling Reliability Tests of Cu-Cu Joints by Two-step Bonding Processes
Thermal Expansions of βSn and Bi in Sn-Bi Alloys
Transient Liquid Phase (TLP) Bonding in Cu-Ni/Sn-0.7Cu/Cu-Ni Joints
Wire Bonding Novel 3D Air-metal Dielectric Structures with ISIG Passivation: Process Development and Reliability

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