|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Electronic Packaging and Interconnections
||Comparing Intermetallic Compound Formation in Solder Interconnects under Different Current Load Conditions
||Yi Ram Kim, Allison Theresa Osmanson, Mohsen Tajedini, Choong-Un Kim, Patrick Thompson, Qiao Chen
|On-Site Speaker (Planned)
||Yi Ram Kim
The comparative studies of intermetallic compound (IMC) formation by electromigration (EM) in SnAgCu (SAC) solder interconnects are done under direct current (DC), and low and high frequency pulsed DC and alternating current (AC). The different features of IMC formation are observed. The DC and pulsed DC load conditions form a typical biased IMC under EM at the anode side of SAC solder interconnect by diffusing Cu from the cathode side. However, high frequency AC forms a relatively thin IMC at both sides. The mechanism of such IMC formation differs between DC and pulsed DC because the Cu diffuses into SAC but does not reach the other side of Cu, forming IMC at its originating side. In addition, the high frequency AC exaggerates a growth of IMC in a finger-like shape and forms IMC at the middle of solder interconnect. The details of the findings will be discussed in this report.