|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Electronic Packaging and Interconnections
||Synchrotron X-ray Study of Cu Electromigration in A Blech Structure
||Pei-Tzu Lee, Cheng-Yu Lee, Shao-Chin Tseng, Mau-Tsu Tang, C. Robert Kao, Cheng-En Ho
|On-Site Speaker (Planned)
Electromigration of Cu interconnects has been a critical reliability concern in semiconductor package for past decades and a dynamic, nondestructive characterization on this issue is still quite lacking to date. In this study, we conducted a real-time analysis on the Cu electromigration in a Blech structure via nano-X-ray fluorescence (nano-XRF) microscopy using synchrotron light source at the beamline 23A, Taiwan Photon Source. The Cu depletion at the cathode and Cu hillock/extrusion formation at the anode upon electron current stressing of 8.3 × 105 A/cm2 were in-situ characterized using nano-XRF in a vacuum environment (5 × 10-7 torr). Furthermore, the detailed crystallographic microstructure of Cu interconnects after electromigration were analyzed using electron backscatter diffraction (EBSD) and transmission electron microscope (TEM). The research findings would greatly advance our fundamental understandings of Cu electromigration mechanism, which is very beneficial to the interconnect reliability reinforcement. Details will be presented in this talk.
||Characterization, Copper / Nickel / Cobalt,