About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
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Alloys and Compounds for Thermoelectric and Solar Cell Applications XII
|
Presentation Title |
All Metal TE Devices Utilizing Mid-entropy Diffusion Barrier |
Author(s) |
Wen-Ching Wu, Hsin-jay Wu |
On-Site Speaker (Planned) |
Wen-Ching Wu |
Abstract Scope |
Metal thermoelectric (TE) devices are highly desirable due to their cost-effectiveness and mechanical robustness. In this study, the main metallic TE substrate consists of high-purity β-FeSi2 or CoSb3, a metal electrode, and the mid-entropy diffusion barrier. Especially, the mid-entropy Ti-Al-Cr-Ni layer is chosen and sputtered onto the as-synthesized metal TE substrates, aiming to effectively prevent excessive inter-diffusion between the electrode and the thermoelectric material within the TE module. The chemical composition of the mid-entropy diffusion barrier is determined based on the phase diagram. By examining the phase diagram, it is possible to identify the single-phase regions adjacent to the Al and Cr components, which offer promising compositions for producing an effective diffusion barrier. |
Proceedings Inclusion? |
Planned: |
Keywords |
Titanium, Thin Films and Interfaces, Energy Conversion and Storage |