| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XII
|
| Presentation Title |
Defect Evolution from Dislocation Network to Solid Solution in SnTe Alloys |
| Author(s) |
Bo-Chia Chen, Szu-Chien Wu, Kuang-Kuo Wang, Hsin-Jay Wu |
| On-Site Speaker (Planned) |
Bo-Chia Chen |
| Abstract Scope |
Introducing different elements may generate defects on various scales. The defects play a crucial role in modifying the properties of thermoelectric materials. Herein, the TE properties are manipulated through defect engineering in the IV-VI group. This work used the Bridgman technique to develop defect-free SnTe alloys with the participations of group IV elements Ge, Sn, and Pb. Doping Pb in (Sn1-xGex)Te alloys increases internal strain, causing the formation of a dislocation network that greatly reduces the thermal conductivity. When more Pb is introduced, the Pb-(Sn1-xGex)Te alloy forms the solid solution. The zT value for the solid-solution (Sn0.7Ge0.3)0.5Pb0.5Te exhibits a six-fold increase compared to pristine SnTe at the same temperature. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Energy Conversion and Storage, Electronic Materials, Other |