About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
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Alloys and Compounds for Thermoelectric and Solar Cell Applications XII
|
Presentation Title |
A-13: Defect-engineering in SnTe Alloys: From Dislocation Frame to Solid Solution |
Author(s) |
Bo-Chia Chen, Szu-Chien Wu, Kuang-Kuo Wang, Hsin-Jay Wu |
On-Site Speaker (Planned) |
Bo-Chia Chen |
Abstract Scope |
Defects can arise at various scales when different elements are introduced, and these defects play an important role in modifying the properties of thermoelectric materials. The following research results through defect engineering demonstrate the thermoelectric properties adjustment in the IV-VI group. Using the Bridgman technique can easily develop defect-free SnTe alloys effectively. The group IV elements Ge, Sn, and Pb, with their similar chemical characteristics and valences, were anticipated to form a solid solution alloy. By doping Pb into (Sn1-xGex)Te alloys, internal strain increased due to the formation of dislocation networks and significantly reduced the thermal conductivity. After the formation of a solid solution in the (Sn0.7Ge0.3)0.5Pb0.5Te alloy, the thermoelectric figure of merit (zT) value was six times higher than that of pristine SnTe at the same temperature, reaching 0.76 at 648 K. |
Proceedings Inclusion? |
Planned: |
Keywords |
Energy Conversion and Storage, Electronic Materials, Other |