About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
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Alloys and Compounds for Thermoelectric and Solar Cell Applications XII
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Presentation Title |
Development of Ag-to-Ag Direct Bonding Technique for Ge-Pb-Te Thermoelectric Materials and Cu Electrodes |
Author(s) |
Yu-En Tsai, Cheng-Lin Shieh, Chien-Neng Liao |
On-Site Speaker (Planned) |
Yu-En Tsai |
Abstract Scope |
GeTe-based compounds exhibit promising thermoelectric properties in the middle-high temperature range. A functional thermoelectric module requires a robust bonding layer between thermoelectric legs and metal electrodes that can withstand thermal cycling and high-temperature aging. In this study, we sequentially deposited a Ni/Pd barrier and an Ag bonding layer on Ge-Pb-Te materials and Cu foils by electroless plating. A seamless Ag bonding layer was formed between Ge-Pb-Te and Cu by hot-pressing at 250 – 325 °C under a pressure of 80 MPa, rendering a fracture shear strength of 14.8 MPa. However, the bonding strength degraded after thermal aging at 400 °C for 24 h due to gross interdiffusion between Ag and Ge-Pb-Te. A new barrier metallization was devised to improve the thermal stability of the Ag bonding layer. The effectiveness of barrier metallization for Ag bonding layer is evaluated in this study. |
Proceedings Inclusion? |
Planned: |
Keywords |
Electronic Materials, Copper / Nickel / Cobalt, Thin Films and Interfaces |