|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXI
||Interfacial Reaction between In Coated Cu Sheet and ENIG Substrate
||Hiroshi Nishikawa, Jianhao Wang, Kento Kariya, Noriyuki Masago
|On-Site Speaker (Planned)
The SiC power device provides the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. To assemble the SiC device, the high temperature packaging technology such as die-attach process is required. Transient liquid phase (TLP) bonding is one of potential die-attach processes for the device. So we have proposed TLP bonding process without solvents using In coated Cu sheet. In this study, In coated Cu sheet was used for an insert material. The In coated Cu sheet was sandwiched between two electroless nickel immersion gold finished (ENIG-finished) Cu disks as a bonding sample. After bonding, cross-sectional views of the joints were obtained by scanning electronic microscope (SEM) and the microstructures of the joints were analyzed. As a result, it was found that the IMC phase was fully formed at the interface and successfully characterized.