|About this Abstract
||2023 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXII
||C-12: Laser-assisted Die Attach Process for SiC Power Semiconductor
||Dongjin Kim, Jiyoon Youm, So-Jeong Lee, Sehoon Yoo, Min-Su Kim
|On-Site Speaker (Planned)
Recent progress in electronic packaging technology for automotive power devices require higher reliability at higher operating temperatures and current densities. Thermal fluctuation caused by manufacturing processes such as die attach, wire bonding, and encapsulation can have a negative impact on module reliability, such as serious damage to packaging materials or module warpage. As a result, reducing thermal damage and stress during the packaging process is critical for power module reliability. Due to the partial heating of the selected area, laser bonding has grown in popularity. When compared to the conventional reflow process, it is possible to reduce thermal damage and warpage on the packages. Using a top-hat shaped infrared laser, a fast die attach process with an Sn-3Ag-0.5Cu preform for the SiC power semiconductor was demonstrated in this study. The laser output and irradiation time were adjusted to range between 5.47 and 7.03 W/mm2 and 1 to 10 s, respectively.
||Joining, Electronic Materials, Characterization