| Abstract Scope |
The layer-stacking-order in two-dimensional van-der-Waals-heterostructures, like graphene, affects their physical properties and potential applications. Trilayer graphene, specifically ABC-trilayer-graphene (ABC-TLG), has captured significant interest due to its unique opto-electronic properties and potential for correlated electronic states. However, achieving stable ABC-stacking in TLG is challenging due to its lower thermodynamic stability. To address this, we utilize a novel strain engineering approach that induces interlayer slippage by applying localized strain to the top layer of ABA graphene, leading to stable ABC-TLG domains. Computational simulations and experiments demonstrate the transition from ABA to ABC-TLG at a specific strain magnitude, transforming the stacking order. We examine the stability of the obtained ABC-configuration, revealing its resistance to transition into other high-energy states. Raman studies further validate and characterize ABC-stacking, highlighting distinct features compared to ABA-region. Our approach provides a controllable method for stable ABC-domains in TLG enabling advanced electronic and optoelectronic devices based on ABC-stacked graphene. |