| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Mechanism of II-IV Semiconductor 2D Growth Facilitated by Crystallographic Anisotropy in Growth Kinetics in Wet Solution |
| Author(s) |
Choong-un Kim |
| On-Site Speaker (Planned) |
Choong-un Kim |
| Abstract Scope |
Growth of 2D semiconductors has attracted extensive attention in recent years because of various new and high-performance devices they can enable when fully developed. A few potential 2D materials have been developed, including materials based on Graphene, metal-dichalcogenides, and III-IV chalcogenide, using mostly physical deposition process of base materials. But, the limitation in materials and processes into 2D structure poses considerable difficulties, impeding timely progress. While exploring various growth mechanisms of II-IV compounds using solution chemistry, we discovered that II-IV semiconductor phases like CdTe can be grown into an atomically thin sheet by taking advantage of extreme anisotropy in layer growth kinetics. It is found that a certain group of cations in solution promotes fast nucleation of CdTe (111) layer but suppresses its growth, leading to a formation of II-IV 2D single crystal materials with (111) surface on flat Si wafer, as will be presented in this paper. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Electrometallurgy |