| Abstract Scope |
Transition metal dichalcogenides (TMDs), such as MoS2, WS2, and WSe2, can be atomically smooth and are less than 1 nm thick in their monolayer form. These two-dimensional semiconductors are especially well-suited for short-channel transistors, energy-efficient devices for 3D integration, and flexible electronics. A key technological challenge is contacting them with low resistance. This presentation will review our group’s work on contacts to TMDs, including epitaxy of the metal on the semiconductor and the effect of metallization on the underlying TMD (e.g., creation of defects and doping). Another key challenge is the deposition of TMDs, especially at low temperatures suitable for the back end of the line for manufacturing computer chips. We will also present our experiences on atomic layer deposition of few-layer TMDs and other layered materials. |