|About this Abstract
||7th World Congress on Integrated Computational Materials Engineering (ICME 2023)
||Predicting the Performance Degradation of Advanced Devices Exposed to Ionizing Radiation
||Xiaoyu Guan, Michael Tonks
|On-Site Speaker (Planned)
It is crucial to ensure the effectiveness and efficiency of semiconductor devices when they work in harsh environments. In this work we are developing a new novel simulation tool that predicts the impact of ionizing radiation on the performance of a semiconductor device. The approach will couple TCAD capability to predict device performance with detailed radiation models to predict charge carrier and lattice defect production. The tool is implemented using the open-source Multiphysics Object-Oriented Simulation Environment (MOOSE). We determine the performance of the devices by calculating local carrier concentration and local current density vs. DS voltage dynamically over time. The results show the relationship of performance degradation rate and irradiation. The final tool will be open source, have robust quality assurance practices, and be able to be referenced in designing more radiation hard devices.