|About this Abstract
||7th World Congress on Integrated Computational Materials Engineering (ICME 2023)
||Modeling Defect Generation During Production of Single Crystal Sapphire
||Peter Raninger, Masoud Sistaninia, Werner Eßl, Georg Reiss, Sina Lohrasbi , Christoph Gammer
|On-Site Speaker (Planned)
Single crystal sapphire can serve as substrate in electronic applications like µ-LEDs for next generation high-resolution displays. The manufacturing process includes directed solidification and cooling to room temperature, where stresses occur in the solid structure. Depending on the process parameters these stresses may lead to the generation of dislocations in one or more slip planes and cause a visible pattern in certain regions of the boule. The underlying mechanisms and the impact on the quality of the produced wafers are not yet fully understood. This work aims at the development of a material model, based on crystal plasticity theory that will be presented and applied for a simplified test case of crystal solidification and cooling. The model describes the onset and evolution of two densities corresponding to mobile and immobile dislocations and is capable to show the interconnection between the formation of dislocation patterns and remaining residual stresses after production.