| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XIX
|
| Presentation Title |
D-22: Mechanisms of Abnormal Grain Growth of Al Bonding Wires under Annealing Process |
| Author(s) |
Jen-Hsuan Tsai, Fan-Yi Ouyang |
| On-Site Speaker (Planned) |
Jen-Hsuan Tsai |
| Abstract Scope |
Wire bonding technology has been utilized in semiconductor industry for electrical connections. Al wire bonding considered as a potential material due to low cost, good conductivity, softness and the ability to be bonded at room temperature. This study investigated the grain growth of Al wire at different annealing temperatures. The Al bonding wires with diameter of 50 μm were carried out in baker at 200°C, 250°C and 300°C for 12 h, 24 h and 48 h, respectively, and the corresponding evolution of grain orientation of Al bonding wires was analyzed using electron back scatter diffraction. Initially, the grains of as-received Al wires were slender grains which is caused by the drawing process during fabrication of the wires. After annealing treatment, considerable grain growth and bamboo structure were observed in Al wires. The mechanism of abnormal grain growth of Al wires will be discussed. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |