| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XIX
|
| Presentation Title |
D-10: A Switching Model of Phase-change Memory by Combining Electrothermal and Phase-field Models |
| Author(s) |
Hwanwook Lee, Minkyu Shin, Yongwoo Kwon |
| On-Site Speaker (Planned) |
Yongwoo Kwon |
| Abstract Scope |
Phase-change memory (PCM) utilizes a reversible transformation between amorphous and crystalline phases in GeSbTe, a chalcogenide material. Insulating amorphous phase and conducting crystalline phase represent binary data of zero and one. Switching operations between zero and one are electrically done. Melt-quench is done by a short high power pulse while crystallization is done by a long moderate power pulse. The switching operations involve electrostatics, Joule heating, heat transfer, and phase transformation effects altogether. In this presentation, we will demonstrate our PCM device model that integrates electrothermal equations to simulation temperature distribution and phase-field equations to simulate phase distribution. Some simulation results on memory and synapse devices will be also shown. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |