About this Abstract |
Meeting |
MS&T22: Materials Science & Technology
|
Symposium
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Advances in Emerging Electronic Nanomaterials: Synthesis, Enhanced Properties, Integration, and Applications
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Presentation Title |
Novel Dirac-source Cold Carrier Injection for Energy-efficient 2D Nanoelectronics |
Author(s) |
Huamin Li, Fei Yao |
On-Site Speaker (Planned) |
Huamin Li |
Abstract Scope |
Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. Here, we investigated graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic refrigeration effect in monolayer MoS2 and WSe2, which enables a transport factor lowering and thus a steep-slope switching mechanism for MoS2 and WSe2 field-effect transistors (FETs). Especially, a record high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the potential of a 2D Dirac-source cold electron transistor as a steep-slope transistor concept for future energy-efficient nanoelectronics. |