About this Abstract |
Meeting |
MS&T22: Materials Science & Technology
|
Symposium
|
Advances in Emerging Electronic Nanomaterials: Synthesis, Enhanced Properties, Integration, and Applications
|
Presentation Title |
First-Principles Studies of Atomic Layer Deposition |
Author(s) |
Lan Li |
On-Site Speaker (Planned) |
Lan Li |
Abstract Scope |
The nucleation mechanism for atomic layer deposition (ALD) of transition metal dichalcogenides (TMDs) has been studied using first-principles density functional theory-based methods. ALD is the self-limiting process that can deposit a range of materials at the nanoscale while maintaining chemical stoichiometry and atomic scale thickness control. It can also conform to high-aspect ratio substrate design. We found that ALD is sensitive to surface chemistry and morphology. This presentation will discuss the controlling factors for the ALD of MoS2 molybdenum disulfide – the most common TMD compound used in electronic devices. The role of surface hydroxyl group, precursor-substrate reaction, and MoS2 nucleation mechanism will be also presented. |