About this Abstract |
Meeting |
MS&T22: Materials Science & Technology
|
Symposium
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Advances in Emerging Electronic Nanomaterials: Synthesis, Enhanced Properties, Integration, and Applications
|
Presentation Title |
Molecular Modeling of Atomic Layer Etching |
Author(s) |
Shenli Zhang, Yihan Huang, Gulcin Tetiker, Saravanapriyan Sriraman, Roland Faller |
On-Site Speaker (Planned) |
Roland Faller |
Abstract Scope |
With the decrease of electronic device size down to the atomic scale, the variability of surface patterning needs to be controlled within dozens of atoms. Plasma etching is an essential surface patterning technique. Conventionally, it is realized by ionizing non-reactive species such as Ar to transfer energy to the surface, and parallel another reactive species such as Cl2 etches the surface either in its neutral or ionized state.
New methods are needed to meet the requirement of precise etching control at the atomic scale, and atomic layer etching (ALE) has been proposed as one solution.
We present a computational study of atomic layer etching of chlorinated germanium surfaces under argon bombardment using molecular dynamics with a newly fitted potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. We show how the etch rate is determined by bombardment energy. |