Abstract Scope |
2D materials, which include graphene, hexagonal boron nitride, and a plethora of transition metal dichalcogenide (TMDC) combinations, have electronic structures exhibiting metallic, semiconducting, and insulating properties. This promises devices with scalability to the atomic limit combined with tunable bandgaps that can be direct or indirect and defect free interfaces. Present will be a summary of our work growing metallic and semiconducting TMDCs by van der Waals epitaxy. We will show how deposition conditions can impact not just the grown material, but also the substrate. This will be important for integration of these materials into nanoelectronics device architectures. We will also discuss recent advances in enhancing the nucleation of ALD dielectrics on these materials. Lastly, we will discuss the deposition of metallic Nb rich Nb1+xSe2 and its thickness dependent electronic properties. |