About this Abstract |
Meeting |
MS&T22: Materials Science & Technology
|
Symposium
|
Advances in Emerging Electronic Nanomaterials: Synthesis, Enhanced Properties, Integration, and Applications
|
Presentation Title |
Area Selective Deposition of TaN for Back End of the Line Applications |
Author(s) |
Rudy J. Wojtecki |
On-Site Speaker (Planned) |
Rudy J. Wojtecki |
Abstract Scope |
The significant advancements in patterning and nanofabrication enable the most advanced technology nodes. However, wiring to these nanometer features requires advancements in process technologies – to ensure device performance and control takes full advantage of nanometer feature sizes where materials and processes have a direct impact on the delay in signal speed through circuit wiring, the resistive-capacitance RC-delay. We will describe the ASD of TaN, typically used as a liner material in device wiring to prevent Cu diffusion and electromigration – it is also a highly resistive metal. In this ASD method TaN was selectively deposited on dielectric surfaces without detectable levels on a metal. On patterned substrates, up to 3.8 nm of a TaN film was deposited on SiN or mesoporous SiCOH. Furthermore, modeling of this ASD process in this application suggests at advanced technology nodes resistance between metal levels may be reduced by as much as 62%. |