Abstract Scope |
The presentation will show new materials design for energy-efficient memory devices. One emerging application of the halide perovskite is the resistive random-access memory (ReRAM) as a promising next-generation nonvolatile memory device. Recently, we reported the asymmetric resistive switching of the halide perovskite film. Schottky barrier induced by TiO2 interfacial layer exhibits lower current at high resistive switching state and larger space charge polarization, which could be useful to ReRAM application. The other material of interest for memory devices is layered compounds of Aurivillius phase, Bi5FeTi3O15. Regardless of multiferroic property and high Curie temperature, it has several inherent problems such as high leakage current, small polarization, and large coercive field. Our recent comprehensive analysis shows how to resolve this problem. Cr doping significantly changes the electric, dielectric, and ferroelectric properties of Bi5FeTi3O15 by reducing the lattice aspect ratio and changing the grain shape. |