About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
|
Printed Electronics and Additive Manufacturing: Advanced Functional Materials, Processing Concepts, and Emerging Applications
|
Presentation Title |
Fabrication and Characterization of β-Ga2O3 Diodes for Radiation Detection |
Author(s) |
Jarod Remy, Lei Raymond Cao |
On-Site Speaker (Planned) |
Jarod Remy |
Abstract Scope |
β-Ga2O3 is an emerging ultra-wide bandgap semiconductor material that has properties that are desirable for radiation detection in extreme environments. Furthermore, the capability of growing Ga2O3 substrates by melt growth and by having a Mohs hardness similar to Si suggest that Ga2O3 devices can be manufactured cheaply and likely using existing tools and processes. Schottky barrier diodes have been fabricated on homoepitaxially grown Ga2O3 with low doping concentrations (6 × 1015 cm-3) and large thickness (20 μm). Sensitivity to alpha radiation has been demonstrated by ΔE spectroscopy and pulse shape analysis. Additionally, high-temperature electrical characterization has been performed up to temperatures of 500 °C including forward and reverse current-voltage sweeps as well as capacitance-voltage sweep while reverse biased. Finally, in the vein of high-temperature operation Schottky diodes were fabricated with different contact metals and configurations in order to determine materials and geometries most suitable for high-temperature environments. |
Proceedings Inclusion? |
Planned: |
Keywords |
Characterization, Energy Conversion and Storage, Thin Films and Interfaces |