| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Recent Advances in Electron Back-Scattered Diffraction and Related Techniques
|
| Presentation Title |
Cross-sectional Electron Channeling Contrast Imaging |
| Author(s) |
Julia Deitz, Timothy Ruggles, Andrew Polonsky, Luis Jauregui, Douglas Trotter |
| On-Site Speaker (Planned) |
Julia Deitz |
| Abstract Scope |
Electron Channeling Contrast Imaging (ECCI) performed in a scanning electron microscope (SEM) has been increasingly implemented as a rapid method for structural defect characterization in lattice mismatched semiconductor materials/devices. Much of this characterization has been performed in plan-view to access interfacial misfit dislocations. The ability to instead perform ECCI cross-sectionally would demonstrate the potential to achieve three-dimensional (3D) analysis of dislocation networks, giving more detail on dislocation-dislocation interactions. With increases in serial sectioning implementations in the focused ion beam SEM, automation routines are uniquely positioned to obtain these 3D dislocation network reconstructions. In this contribution, we highlight practical challenges to collecting this data and pathways forward.
Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Characterization |