| Abstract Scope |
We demonstrate how the richness of information encoded in electron backscattered diffraction (EBSD) patterns is amplified by a new generation of direct electron detectors that enable high speed mapping and acquisition of high-fidelity patterns that can be used for statistically-meaningful crystallographic and defect analyses. We evaluate the potential benefits of acquiring patterns using direct electron detection and applying new analysis algorithms to advance the following applications: (i) high-speed mapping, (ii) orientation mapping of beam-sensitive oxide materials at low kV, (iii) quantitative energy mapping and filtering of diffraction patterns, and (iv) imaging and characterizing crystallographic defects. In the latter case, we quantify the sharpness of EBSD patterns obtained from several additively manufactured metallic alloys, which reveals sub-grain dislocation structures with high fidelity. Our results demonstrate that the dislocation cell walls produced during fast solidification do not always possess measurable misorientations, and thus do not reflect a geometrically necessary defect organization. |