|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XIX
||Comparison of oxide reduction temperature between highly <111>-oriented nanotwinned Cu and regular Cu films
||Wei-You Hsu, Cheng-Syuan Wu, Chi-Shen Lee, Chih Chen
|On-Site Speaker (Planned)
Low temperature Cu-Cu direct bonding was successfully achieved in 2014 using highly <111>-oriented Cu.  Because Cu (111) planes have the highest diffusivity and low oxidation rates, so two highly <111>-oriented Cu films can be bonded at low temperature of 150°C and low pressure of 1 MPa. Using forming gas in Cu-Cu bonding process can efficiently decrease the oxygen content in the interface.  In this study, we use temperature-programmed reduction (H2-TPR) to reduce the oxide of highly <111>-oriented nanotwinned Cu (nt-Cu). Using thermal conductivity detector (TCD) to detect the consumption of hydrogen and then knowing the reduction temperature of nt-Cu under the reducing atmosphere (5%H2+95%Ar) is about 215°C. In contrast, the reduction temperature of regular Cu under the same condition is about 290°C.
||Planned: Supplemental Proceedings volume