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Meeting 2020 TMS Annual Meeting & Exhibition
Symposium Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XIX
Presentation Title D-12: Comparison of Oxide Reduction Temperature between Highly <111>-Oriented Nanotwinned Cu and Regular Cu Films
Author(s) Wei-You Hsu, Cheng-Syuan Wu, Chi-Shen Lee, Chih Chen
On-Site Speaker (Planned) Wei-You Hsu
Abstract Scope Low temperature Cu-Cu direct bonding was successfully achieved in 2014 using highly <111>-oriented Cu. [1] Because Cu (111) planes have the highest diffusivity and low oxidation rates, so two highly <111>-oriented Cu films can be bonded at low temperature of 150C and low pressure of 1 MPa. Using forming gas in Cu-Cu bonding process can efficiently decrease the oxygen content in the interface. [2] In this study, we use temperature-programmed reduction (H2-TPR) to reduce the oxide of highly <111>-oriented nanotwinned Cu (nt-Cu). Using thermal conductivity detector (TCD) to detect the consumption of hydrogen and then knowing the reduction temperature of nt-Cu under the reducing atmosphere (5%H2+95%Ar) is about 215C. In contrast, the reduction temperature of regular Cu under the same condition is about 290C.
Proceedings Inclusion? Planned: Supplemental Proceedings volume

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

4D Characterization of Electromigration-induced Grain Boundary Damage of Cu Interconnects: X-ray Tomography Experiments and Phase-field Simulations
An Ab-initio Study on the Structural and Electrochemical Propeties of Na3V2(PO4)2F3 as Cathode Materials for Hybrid-ion Batteries
CALPHAD-assisted Analyses of BOF Slag Modification and Reduction
Challenges and Solutions for Experimental Investigation of Air and Moisture Sensitive Li Alloys
D-10: A Switching Model of Phase-change Memory by Combining Electrothermal and Phase-field Models
D-11: CALPHAD-assisted Analyses of BOF Slag Recovery
D-12: Comparison of Oxide Reduction Temperature between Highly <111>-Oriented Nanotwinned Cu and Regular Cu Films
D-13: Effects of Current Stressing on Mechanical Property and Microstructure of an Fe-Ni Alloy at Ambient Temperature
D-14: Effects of Plating Current Density on the Microstructure of Cu Pillars and Its Solderability
D-15: Effects of Surface Finish on the Interfacial Cu6Sn5 Morphology and Mechanical Characteristics in Solder Joints
D-16: From Electric Current-induced Lattice Strain to Electromigration Occurrence: An In-situ Study
D-17: Interfacial Reaction of Au-xAg/Al Couples
D-18: Interfacial Reactions in the Au/Sn-xZn/Cu Sandwich Couples
D-19: Interfacial Reactions in the Cu/Sn/Ni Sandwich Couples
D-20: Interfacial Reactions in the Sn/Au-xCu Couples
D-21: Interfacial Reactions of Ag-Au-xPd Alloys Wire Bonding with Al
D-22: Mechanisms of Abnormal Grain Growth of Al Bonding Wires under Annealing Process
Effects of Copper Electroplating Parameters on the Copper-based Solder Joint Reactions
Effects of Pd(P) Thickness on the Interfacial Reaction and Mechanical Properties of the Sn-3.5Ag/Au/Pd(P)/Ni(P) Microelectronic Joints
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Interfacial Reactions between Lead-free Solders and Electroless Co(B) Metallization
Interfacial Stability between High-temperature Lead-free Solders and Substrates
Investigation of Metal Filament Formation
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Microstructure of Cu/Cu Joints using Sn-Coated Cu Particle Paste for High-temperature Application
Real-time Observation of the Accelerated Growth of (Cu,Ni)6Sn5 on Cu-xNi Current Collectors
Revisit the Blech Critical Product: Lattice Strain Induces Electromigration Effect
Study on Eelectromigration of Cu-Sn IMC Formation Due to Currents Stress and Temperature
Study on the Phase Diagrams of Bi-Te Binary and Bi-Te-RE (Yb, La, Ce, Nd, Sm, Tb, Er) Ternary Systems
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Thermodynamic Modeling of the Cu-Mg-Si-Sn Quaternary System and Interpretation of Mg2(Si0.3Sn0.7)/Cu Thermoelectric Interconnections
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