|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films and Coatings
||Comparative Study of Surface and Bulk Interfacial Stresses Effect on Radiative Recombination Emission in Silicon
||Sufian Abedrabbo, Anthony T. Fiory, Nuggehalli M. Ravindra
|On-Site Speaker (Planned)
Interfaces are ubiquitous in most engineered materials and devices and can exist in ultra-thin layered films, thin films on bulk materials, nanocrystals embedded in bulk materials, dislocations created by implantation or ion-beam mixing, diffused impurities and textured coated surfaces. Interfaces are credited for property modifications of interfaced materials by introduction of stresses of various sorts and levels. In this study, we focus on interfaces created in silicon and specifically address their strong effect on radiative properties of indirect bandgaps. In particular, attention is drawn to the random nature of created stresses and strains and its importance in modulating the indirect bandgap of Si favorably towards radiative recombination of free-carriers. Photoluminescence and stress level properties of surface engineered interfaces via colloidal coatings is compared to those of thermal and chemical deposited coatings. Light emission properties of zero-energy implant diffused dopants are compared to properties of same implanted dopants.
||Planned: Supplemental Proceedings volume