|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films and Coatings
||B-29: Effect of Post-Deposition Annealing on the Structural and Optical Properties of Sputter-Deposited Ga2O3 Thin Films
||Nanthakishore Makeswaran, Anil Krishna Battu, C.V. Ramana
|On-Site Speaker (Planned)
In recent years wide bandgap semiconductors have been the subject of extensive research due to their potential use a variety of technological applications ranging from photonics to catalysis and magneto electronics. Gallium oxide (Ga2O3), the second largest wide-bandgap material exhibits multiple structures, with useful material properties as well as chemical and thermal stability. Experiments were done to determine the effects on nanocrystalline gallium oxides’ electronic structure, chemical bonding properties, and band gap. The samples, which were magnetron sputter deposited onto Si(100) substrates at 500˚C, where annealed in heat treatment furnaces in a range of temperatures from 500-900˚C and where evaluated through the use of XRD, Raman Spectroscopy and XPS measurements. Results indicate improved structural quality and packing density upon post annealing. The effect of post-deposition annealing on the crystallization, chemical bonding and optical properties discussed.
||Planned: Supplemental Proceedings volume