| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Functional and Structural Thin Films and Coatings
|
| Presentation Title |
Diamond Epitaxy Using Nickel to Facilitate Epitaxy with Q-carbon as the Seed Layer |
| Author(s) |
Pranay Bhasker Kalakonda, Naveen Narasimhachar Joshi, Siba Sundar Sahoo, Roger Narayan, Jagdish Narayan |
| On-Site Speaker (Planned) |
Pranay Bhasker Kalakonda |
| Abstract Scope |
We report the growth of diamond heterostructures on Si (100) using Hot Filament Chemical Vapor Deposition (HFCVD) with Q-carbon and Ni buffers. Bulk diamond is mainly grown by techniques like High Pressure High Temperature (HPHT) process and Chemical Vapor deposition (CVD) but diamond as a thin film is much desired due to its potential applications in advanced electronics. Diamond has strikingly superior Figures of Merit (FoM) when compared to other semiconductors. Here Ni is grown epitaxially on Si (100) using RF Sputtering with substrate heating at 300ᵒC to facilitate epitaxy of diamond film to Silicon substrate. Q-Carbon is deposited over Ni/Si heterostructure with help of Plasma Enhanced CVD technique. Finally, diamond thin film is grown on Q-carbon/Ni/Si heterostructure by employing HFCVD. XRD is used to establish epitaxy and EBSD to corroborate the same. HRSEM shows surface features and Cross Sectional HRTEM shows growth of epitaxial diamond/Ni/Si heterostructures with Q-carbon seed. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, Nanotechnology |