About this Abstract |
Meeting |
2020 TMS Annual Meeting & Exhibition
|
Symposium
|
2020 Technical Division Student Poster Contest
|
Presentation Title |
SPG-21: MgO-based ReRAM for Neuromorphic Computing |
Author(s) |
Muhammad Izzat Bin Abdul Aziz, Lee Pooi See |
On-Site Speaker (Planned) |
Muhammad Izzat Bin Abdul Aziz |
Abstract Scope |
Resistive random access memory (ReRAM) is touted to replace Silicon-based flash memory due to its low operating voltage, fast access speeds and the potential to scale down to nm range for ultra-high density storage. Its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we developed a cationic ReRAM with MgO as the insulating layer. Au bottom electrode is electron-beam evaporated as a chemically stable conductor. The insulating MgO layer is deposited by RF sputtering with a thickness of ~60nm. The electron-beam evaporated Ag top electrode is used to elucidate resistive switching memory through the cationic diffusion mechanism. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with low ON voltage of ~1.0V and memory window of ~ 1x 105.Multi-level resistance is achieved through consecutive WRITE and ERASE pulse schemes, which demonstrates analog switching capability, suitable for neuromorphic computing applications. |
Proceedings Inclusion? |
Undecided |