About this Abstract |
Meeting |
2020 TMS Annual Meeting & Exhibition
|
Symposium
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2020 Technical Division Student Poster Contest
|
Presentation Title |
SPG-68: Investigation into the Occurrence of Electromigration for Aluminum: Microstructure and In-situ XRD Study |
Author(s) |
Kuan-Hsueh Lin, Yu-chen Liu, Ching-Shun Ku, Shang-Jui Chiu, Shih-kang Lin |
On-Site Speaker (Planned) |
Kuan-Hsueh Lin |
Abstract Scope |
Electromigration becomes the most important cause of failure for future device since the ever-raising current density. The concept “critical product” was first proposed for aluminum thin film by Blech. However, our preliminary study showed that the Blech critical product cannot explain the occurrence of electromigration for strips in 500 microns long or longer. In this study, in-situ current stressing was conducted under fixed temperature. The relation between lattice strain and hillocks formation was discussed. It was observed that over a critical strain, hillocks tend to form and a permanent diffraction peak shift occurred. The critical strain was found to be around 0.8% for strip ranging from 500 to 20000 microns. First principle calculation showed the difference of diffusion barrier under this strain and further TEM investigation was conducted to compare the microstructure change after the hillocks formation. The strain-driven electromigration mechanism is elucidated in this poster presentation. |
Proceedings Inclusion? |
Undecided |