About this Abstract |
Meeting |
2020 TMS Annual Meeting & Exhibition
|
Symposium
|
2020 Technical Division Student Poster Contest
|
Presentation Title |
SPG-14: High-temperature Oxidation Behavior of Al-Cr-Nb-Si-Zr Nitride Thin Films under Air Atmosphere Environment |
Author(s) |
Ching-Nien Tsai, Jian-Jie Wang, Fan-Yi Ouyang, Shou-Yi Chang |
On-Site Speaker (Planned) |
Ching-Nien Tsai |
Abstract Scope |
This study investigated high-temperature oxidation behavior of high entropy alloy Al-Cr-Nb-Si-Zr nitride (HEAN) thin films. The HEAN films were first deposited on the Si substrate in Ar+N2 mixed atmospheres using radio frequency (RF) magnetron sputter system and then subject into the dry air atmosphere at 850 oC for different periods. The thickness of the oxidation scale was about 517-565 nm after 25 h, demonstrating that HEAN films possess good oxidation resistance at 850 oC. After the oxidation process, triple scales, Al2O3/Cr2O3/Al2O3, were observed and the growth of the inner α-Al2O3 layer is predominant. Furthermore, to understand the oxidation mechanism of HEAN films, Au nanoparticles were deposited at the surface of films as diffusion markers. We found that markers were diffused to locate at Cr2O3/inner Al2O3 interface after the oxidation test. The corresponding microstructural evolution of oxide and oxidation mechanisms would be discussed in detail. |
Proceedings Inclusion? |
Undecided |