| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Neutron and X-ray Scattering in Materials Science and Engineering
|
| Presentation Title |
Planar thermal transport mapping of the GaN film with Spatial-Temporal-Resolved X-ray diffraction |
| Author(s) |
Thanh Nguyen, Chuliang Fu, Buxuan Li, Tyra Espedal, Zhantao Chen, Haidan Wen, Mingda Li |
| On-Site Speaker (Planned) |
Chuliang Fu |
| Abstract Scope |
Characterizing the thermal properties of thin films in both cross-plane and in-plane directions is challenging, especially given the impact of substrate interfaces and synthesis imperfections. In this study, we present preliminary measurements of the thermal properties of an epitaxial gallium nitride (GaN) thin film transferred onto a silicon wafer using synchrotron-based pump-probe x-ray diffraction. The spatial separation between the pump laser and the x-ray probe allows for a detailed analysis of thermal transport with planar sensitivity, accounting for heat transport through film wrinkles. Simulations are developed for both homogeneous thin films and heterogeneous films with defect-affected thermal transport parameters, providing insights into the experimental data. This method can be extended to multi-layered films with defects and combined with other characterization techniques for comprehensive thermal transport measurements. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Modeling and Simulation, Thin Films and Interfaces |