About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
|
Defects and Interfaces: Modeling and Experiments
|
Presentation Title |
Void Nucleation in a through Silicon via (TSV): Unraveling the Role of Tilt Grain Boundaries through Atomistic Investigation |
Author(s) |
Armin Shashaani, Panthea Sepehrband |
On-Site Speaker (Planned) |
Armin Shashaani |
Abstract Scope |
The void formation is the initial stage of many failure mechanisms. Despite its importance, considering the challenges for experimental analysis of the phenomena, there are a lot of uncertainties about the mechanism of void nucleation. An important parameter affecting void nucleation under stress is the grain type and orientation. This study aims to understand this effect through a systematical analysis, using Molecular Dynamics Simulations. Void formation during tension in the tilt grain boundary and within the grain of a face-centered cubic (FCC) Cu bicrystal is examined. Three misorientation axes - <100>, <110>, and <111> - with various tilt angles are explored. This study suggests that depending on the dislocation network that develops at the grain boundary, voids may nucleate at the grain boundaries or inside the grains. Dislocation evolutions throughout loading are examined to define the mechanism of void formation in these two scenarios. |
Proceedings Inclusion? |
Planned: |
Keywords |
Modeling and Simulation, Copper / Nickel / Cobalt, Other |