About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
|
Defects and Interfaces: Modeling and Experiments
|
Presentation Title |
Evolution of Disorder at Epitaxial Fe3O4 / Cr2O3 Interfaces under Irradiation |
Author(s) |
Tiffany Kaspar, Steven Spurgeon, Kayla Yano, Jijo Christudasjustus, Bethany Matthews, Mark Bowden, Colin Ophus, Hyosim Kim, Yongqiang Wang, M. Oskar Liedke, Daniel Schreiber |
On-Site Speaker (Planned) |
Tiffany Kaspar |
Abstract Scope |
Disordering processes in oxide materials are complicated by the presence of interfaces, which can serve as either point defect sinks or accumulation sites; the response depends on factors such as interfacial structure, chemistry, and termination. We have characterized the disordering of epitaxial Fe<sub>3</sub>O<sub>4</sub>(111) / Cr<sub>2</sub>O<sub>3</sub>(0001) thin film heterostructures after irradiation at room temperature. The density of misfit dislocations in both the Fe<sub>3</sub>O<sub>4</sub> and Cr<sub>2</sub>O<sub>3</sub> layers are varied by changing the thickness of Cr<sub>2</sub>O<sub>3</sub> to be pseudomorphically strained to the Al<sub>2</sub>O<sub>3</sub> (0001) substrate (5 nm thick), or partially relaxed (20 nm thick). In both cases, irradiation by 400 keV Ar<sup>2+</sup> leads to damage accumulation on the Fe<sub>3</sub>O<sub>4</sub> side of the heterointerface, and the interface with more misfit dislocations exhibits faster disordering and Fe reduction compared to the less-defective interface. Positron annihilation spectroscopy of heterostructures after irradiation with 200 keV He<sup>+</sup> reveals different defect generation mechanisms in Fe<sub>3</sub>O<sub>4</sub> compared to Cr<sub>2</sub>O<sub>3</sub>. |
Proceedings Inclusion? |
Planned: |
Keywords |
Thin Films and Interfaces, Characterization, Nuclear Materials |