| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Defects and Interfaces: Modeling and Experiments
|
| Presentation Title |
Mapping Stacking Fault by Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM) |
| Author(s) |
Yongwen Sun, Sheng Yin, Ju Li, Andrew Minor, Yang Yang |
| On-Site Speaker (Planned) |
Yang Yang |
| Abstract Scope |
Stacking faults significantly impact material properties and performance. Precise mapping of these faults at nanometer resolution can provide key insights into their role in material performance. We present a pioneering approach utilizing 4D-STEM for detailed stacking fault mapping, revealing crucial information about their interactions and impact on materials. Our methodology is demonstrated through two applications. First, we dynamically examine stacking fault evolution in CrCoNi medium-entropy alloys (MEAs), illustrating short-range order (SRO)'s influence on mechanical behavior. Additionally, we map stacking faults in Wadsley–Roth oxides (WRO) -based mixed ionic and electronic conductors (MIECs) that enable high-rate lithium-ion batteries. This research emphasizes the potential of nanoscale stacking fault mapping in guiding superior material design and performance. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, High-Entropy Alloys, Mechanical Properties |