|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Functional Nanomaterials: Functional Low-Dimensional (0D, 1D, 2D) Materials 2022
||In-situ Investigation of the Interface Formation between Si-terminated Diamond and a Nb2O5 Electron Acceptor Layer for Electronic Applications
||Gabrielle Abad, Stephen McDonnell
|On-Site Speaker (Planned)
Diamond, an ultra-wide band gap semiconductor, has shown promise in high power, frequency, and temperature electronics; however, issues with impurity doping has limited its use. Instead, surface transfer doping has been used to induce a two-dimensional hole gas at the diamond surface increasing its conductivity. The established method to do this is to hydrogen-terminate diamond prior to the addition of an electron acceptor layer. Alternatively, we investigate silicon-terminated diamond with a Nb2O5 electron acceptor layer. In ultra-high vacuum, Si is deposited onto diamond substrates via electron beam (e-beam) deposition. The formation of Nb2O5 is accomplished by either sequentially e-beam depositing Nb in an oxygen partial pressure or exposing Nb to oxygen post-deposition. To observe how surface structure. interfacial chemistry, electronic structure, and band alignment evolves with Nb2O5 thickness, in-situ low energy electron diffraction (LEED), x-ray photoemission spectroscopy (XPS), ultraviolet photoelectron (UPS) spectroscopy, and angle-resolved photoemission (ARPES) spectroscopy are used.
||Electronic Materials, Characterization, Thin Films and Interfaces