|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Functional Nanomaterials: Functional Low-Dimensional (0D, 1D, 2D) Materials 2022
||The scaling of low-temperature ferroelectric Hf0.5Zr0.5O2 thin films using anhydrous H2O2
||Yong Chan Jung, Jin-Hyun Kim, Jaidah Mohan, Heber Hernandez-Arriaga, Su Min Hwang, Daniel Alvarez, Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim
|On-Site Speaker (Planned)
||Yong Chan Jung
In this study, the effect of film thickness and anhydrous H2O2 on ferroelectric properties of low-temperature Hf0.5Zr0.5O2 (HZO) films are investigated. In our previous study, it was reported that very thin (~5 nm) films required higher energy for crystal nucleation and growth . Interestingly, an oxygen source of the anhydrous H2O2 acts as a good chemically driven densifier by producing highly dense hydroxyl surface . As a result, the 10 and 7 nm-thick HZO were crystallized at the deposition temperature of 300 °C without annealing process. The 5 nm-thick HZO was crystallized into the ferroelectric orthorhombic phase during 400 °C annealing process. It is confirmed that anhydrous H2O2 reduces the crystallization temperature by enabling more closely compacted HZO film deposition.
 S. J. Kim et al., Appl. Phys. Lett. 112, 172902 (2018).
 S. W. Park et al., Surf. Sci. 652, 322 (2016)
||Thin Films and Interfaces, Electronic Materials, Phase Transformations