|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Advanced Functional and Structural Thin Films and Coatings
||Effect of Oxygen Partial Pressure and Pulse Frequency on the Structure and Properties of Tungsten Incorporated Ga2O3 Films made by Pulsed Laser Deposition
||Francelia Sanchez, Debabrata Das, C.V. Ramana
|On-Site Speaker (Planned)
Gallium oxide (Ga2O3), which is an ultra-wide band gap material, has potential for integration into the next-generation electronic and optoelectronic devices. High physical and chemical stability also makes intrinsic and doped Ga2O3 interesting for many technological applications. In this work, the effect of oxygen partial pressure (pO2) and pulsed-laser frequency (fp) on the structure, morphology, and optical properties of tungsten (W) incorporated Ga2O3 (Ga2-2xWxO3, GWO) films made by pulsed laser deposition (PLD) investigated. The GWO films were deposited onto Si(100) at 700°C by varying pO2 and fp in the range of 50 to 200 mTorr and 3 to 5 Hz, respectively. X-ray diffraction, atomic force microscopy, UV-visible spectrophotometry, and spectroscopic ellipsometry were employed to understand the structure-property correlation. The results indicate that the grain size and crystallinity increase with oxygen partial pressure while the inverse correlation exists with the frequency. These changes also influence the optical properties of GWO films.
||Characterization, Thin Films and Interfaces, Electronic Materials