|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Advanced Functional and Structural Thin Films and Coatings
||Large Scale Growth of Diamond on Surface-terminated Silicon-incorporated Diamond-like Carbon Thin Films
||Parand Riley, Pratik Joshi, Roger Narayan, Jagdish Narayan
|On-Site Speaker (Planned)
Continuous diamond growth over large areas with reduced thermal stress is fundamental to benefit from the unique properties of diamond. We report a method to modify the surface of silicon-incorporated diamond-like carbon (Si-DLC) thin-film to enhance the nucleation and growth of diamond. In this method, the surfaces of Si-DLC films are plasma treated by fluorine and oxygen species using a reactive ion etching process, to produce fluorine-terminated Si-DLC (F Si-DLC) and Oxygen-terminated Si-DLC (O Si-DLC) films. The analyses represented that the sp2/sp3 carbon bond ratio on the surface of F Si-DLC and O Si-DLC has diminished from 20.28% in Si-DLC to 4.41% and 8.96%, respectively. Moreover, new sp3 hybridized bonds formed on the surface of F Si-DLC and O Si-DLC films. Analyses results proved that in comparison with Si-DLC, the nucleation density and growth of diamond on F Si-DLC and O Si-DLC films have enhanced significantly, and the stress reduced.
||Thin Films and Interfaces, Characterization, Surface Modification and Coatings