| About this Abstract |
| Meeting |
2023 TMS Annual Meeting & Exhibition
|
| Symposium
|
Materials Research in Reduced Gravity
|
| Presentation Title |
Thermophysical Properties of Ge- and Si-based Semiconductors |
| Author(s) |
Birte Riechers, Yuansu Luo, Bernd Damaschke, Konrad Samwer, Robert Maaß |
| On-Site Speaker (Planned) |
Birte Riechers |
| Abstract Scope |
The semiconductors Si and Ge have been the workhorses for electronic hardware production for a long period of time. High-precision measurements of thermophysical properties of these semiconductor materials such as density, thermal expansion, surface tension, viscosity, and electrical resistivity, are crucial especially for modelling processing conditions and compliance with applicational demands.
Due to the strong reactivity of the high-temperature melts of pure Ge and Si1-xGex (x = 0.75, 0.5, and 0.25) alloys, a contactless approach is most suitable for high-quality measurements. Thus, measurements were performed under low-gravity conditions using an electromagnetic levitator on board of the International Space Station within the framework of the European Space Agency project “SEMITHERM” (Investigations of thermophysical properties of liquid semiconductors in the melt and the undercooled state under microgravity conditions).
The measured thermophysical properties will be discussed with an emphasis on trends connected to the compositional variation of all probed alloys and pure Ge. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, |