|About this Abstract
||2020 TMS Annual Meeting & Exhibition
||Functional Nanomaterials 2020: Translating Innovation into Pioneering Technologies
||Vapor-phase Infiltration Synthesis of Organic-inorganic Hybrid Nanocomposite Resists for Next Generation Lithography
||Nikhil Tiwale, Ashwanth Subramanian, Kim Kisslinger, Ming Lu, Jiyoung Kim, Aaron Stein, Chang-Yong Nam
|On-Site Speaker (Planned)
Organic-inorganic hybrid resists with high etch resistance and readily variable composition and exposure characteristics are critical for advanced lithography, but typically available hybrid resists are chemically synthesized and negative-tone. Here we have developed a new hybrid resist generation scheme exploiting vapor-phase inorganic infiltration into commonly available organic resist thin films via infiltration synthesis, an organic-inorganic hybridization method derived from atomic layer deposition (ALD). Electron lithography study of a model hybrid resist system consisting of AlOx-infiltrated poly(methylmethacrylate) (PMMA) not only demonstrates fully controllable electron beam exposure characteristics and etch resistance, but also extremely high Si etch selectivity far exceeding known commercial positive-tone resists, enabling Si nanostructures with resolution ~30 nm and aspect ratio up to ~17. The easy implementabilility, combined with versatile ex-situ control of resist characteristics, makes this hybrid resist synthesis approach uniquely suited for addressing the resist performance required for advanced nanolithography techniques, such as extreme ultraviolet (EUV) lithography.
||Planned: Supplemental Proceedings volume