| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
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| Symposium
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Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXIII
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| Presentation Title |
A-27: Co/Bi2(Se,Te)3 Interfacial Reactions and Bi-Co-Se-Te Phase Equilibria |
| Author(s) |
Yung-Chun Tsai, He-Cheng Yang, Cheng-Hsi Ho, Sinn-wen Chen |
| On-Site Speaker (Planned) |
Yung-Chun Tsai |
| Abstract Scope |
Bi2(Se,Te)3 is an important thermoelectric material, and Co serves as a potential diffusion barrier. This study examined the electroplated Co/Bi2(Se,Te)3 interfacial reactions at temperatures of 300℃, 400℃, and 500℃. To provide a comprehensive understanding of the interfacial reaction, this study also investigated the Co-Bi-Se-Te phase equilibria isothermal tetrahedrons. In the Co/Bi2(Se0.33Te0.67)3 couple reacted at 300℃, two reaction phases, β-Co1-x(Se,Te) and (Bi2)m(Bi2(Se,Te)3)n, were formed. Similar results were found in the Co/Bi2(Se0.33Te0.67)3 couple reacted at 400℃. The diffusion path observed was Co/β-Co1-x(Se,Te)/(Bi2)m(Bi2(Se,Te)3)n/ Bi2(Se0.33Te0.67)3. When the temperature was increased to 500℃, the formation of the Liquid (Bi) phase adjacent to the β-Co1-x(Se,Te) phase was observed. Regardless of the reaction time, there was minimal increase in the thickness of the reaction layer at both 300℃ and 400℃, indicating that Co is suitable as a barrier layer. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Phase Transformations, Energy Conversion and Storage |